- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375777 > FDMS8692 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench㈢ MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDMS8692 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET |
| 中文描述： | 12 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 211K |
| 代理商： | FDMS8692 |
July 2007
2007 Fairchild Semiconductor Corporation
FDMS8692 Rev.C
www.fairchildsemi.com
1
F
FDMS8692
N-Channel PowerTrench
MOSFET
30V, 28A, 9.0m
Features
Max r
DS(on)
= 9.0m
at V
GS
= 10V, I
D
= 12A
Max r
DS(on)
= 14.0m
at V
GS
= 4.5V, I
D
= 10.5A
Advanced Package and Silicon combination for
low r
DS(on)
and high efficiency
MSL1 robust package design
RoHS Compliant
General Description
The FDMS8692 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance.
Applications
High
Side for Synchronous Buck to Power Core Processor
Secondary Side Synchronous Rectifier
High
Side Switch in POL DC/DC Converter
Oring FET/ Load Switch
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
30
±20
28
48
12
120
150
41
2.5
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T
C
= 25°C
-Continuous (Silicon limited) T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Single Pulse Avalanche Energy (Note 3)
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
E
AS
mJ
P
D
W
T
J
, T
STG
°C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
3.0
50
°C/W
Device Marking
FDMS8692
Device
FDMS8692
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000units
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
G
S
S
S
Pin 1
Power 56 (Bottom view)
D
DD
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDMS9600S | Dual N-Channel PowerTrench㈢ MOSFET |
| FDMS9620S | Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ |
| FDMW2512NZ | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
| FDN302 | P-Channel 2.5V Specified PowerTrench MOSFET |
| FDN302P | CAP CER 2.2UF 16V 10% X5R 1206 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMS8820 | 功能描述:MOSFET NCh 30V 116A 2.4mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8848NZ | 功能描述:MOSFET 40V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8860AS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMS8880 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8888 | 功能描述:MOSFET N-Channel PwrTrench 30V 21A 9.5mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。