- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375777 > FDMS8690_07 (Fairchild Semiconductor Corporation) N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз PDF資料下載
參數(shù)資料
| 型號(hào)： | FDMS8690_07 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз |
| 中文描述： | N溝道功率MOSFET的30V的海溝㈢，第27A條，9.0mз |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 275K |
| 代理商： | FDMS8690_07 |
tm
February 2007
F
M
2007 Fairchild Semiconductor Corporation
FDMS8690 Rev.C2
www.fairchildsemi.com
1
FDMS8690
N-Channel Power Trench
MOSFET
30V, 27A, 9.0m
Features
Max r
DS(on)
= 9.0m
at V
GS
= 10V, I
D
= 14.0A
Max r
DS(on)
= 12.5m
at V
GS
= 4.5V, I
D
= 11.5A
High performance trench technology for extremely low r
DS(on)
and gate charge
Minimal Qgd (2.9nC typical)
RoHS Compliant
General Description
This device has been designed specifically to improve the
efficiency of DC/DC converters. Using new techniques in
MOSFET construction, the various components of gate charge
and capacitance have been optimized to reduce switching
losses. Low gate resistance and very low Miller charge enable
excellent performance with both adaptive and fixed dead time
gate drive circuits. Very low r
DS(on)
has been maintained to
provide an extremely versatile device.
Application
High Efficiency DC-DC converters.
Notebook CPU power supply
Multi purpose Point of Load
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
30
±20
27
52
14
100
37.8
2.5
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T
C
= 25°C
-Continuous (Silicon limited)
T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
3.3
50
°C/W
Device Marking
FDMS8690
Device
FDMS8690
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
G
S
S
S
Pin 1
Power 56 (Bottom view)
D
D
D
D
4
3
2
1
5
6
7
8
G
S
S
S
D
D
D
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDMS8690 | N-Channel PowerTrench MOSFET |
| FDMS8692 | N-Channel PowerTrench㈢ MOSFET |
| FDMS9600S | Dual N-Channel PowerTrench㈢ MOSFET |
| FDMS9620S | Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ |
| FDMW2512NZ | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMS8692 | 功能描述:MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8820 | 功能描述:MOSFET NCh 30V 116A 2.4mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8848NZ | 功能描述:MOSFET 40V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8860AS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMS8880 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。