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參數(shù)資料
| 型號(hào)： | FDMS8690_07 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз |
| 中文描述： | N溝道功率MOSFET的30V的海溝㈢，第27A條，9.0mз |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 275K |
| 代理商： | FDMS8690_07 |
F
M
FDMS8690 Rev.C2
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
30
V
I
D
= 250
μ
A, referenced to 25°C
34
mV/°
C
V
DS
= 24V , V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
1
μ
A
nA
±100
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
1
1.6
3
V
I
D
= 250
μ
A, referenced to 25°C
-4.5
mV/°C
r
DS(on)
Drain to Source On Resistance
V
GS
= 10V, I
D
= 14.0A
V
GS
= 4.5V, I
D
= 11.5A
V
GS
= 10V, I
D
= 14.0A, T
J
= 125°C
7.4
9.9
10.6
9.0
12.5
13.3
m
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate Resistance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
1260
535
80
1.1
1680
715
120
5.0
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Q
g(TOT)
Total Gate Charge at 10V
Q
g(5)
Total Gate Charge at 5V
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
V
DD
= 15V, I
D
= 1.0A
V
GS
= 10V, R
GEN
= 6
8
16
10
42
35
27
14
ns
ns
ns
ns
nC
nC
nC
nC
1.8
26
19
18.8
10
3.5
2.9
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
DD
= 15V
I
D
= 14.0A
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
V
GS
= 0V, I
S
= 2.1A (Note 2)
0.7
1.2
45
33
V
ns
nC
I
F
= 14.0 A, di/dt = 100A/
μ
s
Notes:
1:
R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5
x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while
R
θ
CA
is determined by
the user's board design.
2:
Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
a. 50°C/W when mounted on
a 1 in
pad of 2 oz copper
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
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