參數(shù)資料
型號： FDMS8672S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench SyncFET 30V, 35A, 5mohm
中文描述： 17 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA
封裝： ROHS COMPLIANT, POWER 56, 8 PIN
文件頁數(shù)： 3/8頁
文件大?。?/td> 392K
代理商： FDMS8672S
F
S
T
FDMS8672S Rev.C1
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
5
0
40
80
120
160
200
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
=
3.0V
V
GS
= 3.5V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
40
80
120
160
200
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 10V
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
= 3.5V
V
GS
= 3.0V
V
GS
=
4.5V
Normalized On-Resistance
Figure 3. Normalized On Resistance
vs Junction Temperature
-75
-50
-25
0
25
50
75
100
125
150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
I
D
= 17A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
5
6
7
8
9
10
4
6
8
10
12
14
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= 17A
r
D
,
S
(
m
)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1
2
3
4
0
30
60
90
120
150
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
20
Source to Drain Diode
相關(guān)PDF資料
PDF描述
FDMS8674 Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 150; rf (ohm) max: 2.5typ 1.5; Condition IF at rf (mA): 2.0 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.31; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMS8674 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8674_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 21A, 5.0mヘ
FDMS8680 功能描述:MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8690 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8690_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз
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