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參數(shù)資料
| 型號： | FDMS8672S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench SyncFET 30V, 35A, 5mohm |
| 中文描述： | 17 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA |
| 封裝： | ROHS COMPLIANT, POWER 56, 8 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 392K |
| 代理商： | FDMS8672S |
F
S
T
FDMS8672S Rev.C1
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 1mA, V
GS
= 0V
30
V
I
D
= 50mA, referenced to 25°C
23
mV/°C
V
DS
= 24V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
500
±100
μ
A
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 1mA
1
1.5
3
V
I
D
= 50mA, referenced to 25°C
-5.4
mV/°C
r
DS(on)
Drain to Source On Resistance
V
GS
= 10V, I
D
= 17A
V
GS
= 4.5V, I
D
= 15A
V
GS
= 10V, I
D
= 17A ,T
J
= 125°C
V
DS
= 10V, I
D
= 17A
4.0
5.2
6.1
72
5.0
7.0
7.8
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 15V, V
GS
= 0V
f = 1MHz
1890
555
205
1.1
2515
740
380
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(4.5V)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 4.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= 15V, I
D
= 17A
V
GS
= 10V, R
GEN
= 7
11
17
27
7
33
16
5
6
20
31
44
14
47
23
ns
ns
ns
ns
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 4.5V
V
DD
= 15V,
I
D
= 17A
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 1.7A
0.4
20
16
0.7
32
28
V
ns
nC
I
F
= 17A, di/dt = 300A/
μ
s
Notes:
1:
R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5
x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while
R
θ
CA
is determined by
the user's board design.
2:
Pulse time < 300
μ
s, Duty cycle < 2.0%.
a. 50°C/W when mounted on
a 1 in
pad of 2 oz copper
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
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| FDMS8674 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| FDMS8680 | 功能描述:MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8690 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8690_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз |
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