參數(shù)資料
型號(hào)： FDMS8680
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： N-Channel PowerTrench㈢ MOSFET 30V, 35A, 7.0mヘ
中文描述： 14 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 217K
代理商： FDMS8680
July 2007
2007 Fairchild Semiconductor Corporation
FDMS8680 Rev.C
www.fairchildsemi.com
1
F
FDMS8680
N-Channel PowerTrench
MOSFET
30V, 35A, 7.0m
Features
Max r
DS(on)
= 7.0m
at V
GS
= 10V, I
D
= 14A
Max r
DS(on)
= 11.0m
at V
GS
= 4.5V, I
D
= 11.5A
Advanced Package and Silicon combination for
low r
DS(on)
and high efficiency
MSL1 robust package design
RoHS Compliant
General Description
The FDMS8680 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance.
Applications
High Side
for Synchronous Buck to Power Core Processor
Secondary Side Synchronous Rectifier
High
Side Switch in POL DC/DC Converter
Oring FET/ Load Switch
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
30
±
20
35
63
14
100
216
50
2.5
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T
C
= 25°C
-Continuous (Silicon limited) T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Single Pulse Avalanche Energy (Note 3)
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
E
AS
mJ
P
D
W
T
J
, T
STG
°C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
2.5
50
°C/W
Device Marking
FDMS8680
Device
FDMS8680
Package
Power 56
Reel Size
13"
Tape Width
12mm
Quantity
3000units
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
G
S
S
S
Pin 1
Power 56 (Bottom view)
D
DD
D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMS8690 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8690_07 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз
FDMS8692 功能描述:MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8820 功能描述:MOSFET NCh 30V 116A 2.4mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8848NZ 功能描述:MOSFET 40V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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