參數(shù)資料
型號(hào)： FDMS2380
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 外設(shè)及接口
英文描述： 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 2K; RAM: 192; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 250 (@8MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLSP0020JB-A (20P2F-A)
中文描述： HALF BRIDGE BASED PRPHL DRVR, QCC18
封裝： QFN-18
文件頁數(shù)： 4/15頁
文件大?。?/td> 388K
代理商： FDMS2380
F
FDMS2380 Rev. A
www.fairchildsemi.com
4
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
V
BATT(Oper)
Operating Supply Voltage
I
SQ
Supply Quiescent Current
I
LK
Output Leakage Current
On Characteristics
Switching Characteristics
(Excitation Path)
t
d(ON)
Output Turn-On Delay Time
t
d(OFF)
Output Turn-Off Delay Time
t
r
Rise Time
t
f
Fall Time
Logic Input Characteristics
V
IL
Input Low Level Voltage
V
IH
Input High Level Voltage
V
CL
Input Clamp Voltage
Protection and Diagnostics Characteristics
(Note 1)
Thermal Shut-down Junction
Temperature
Notes:
1.
Integrated protection functions, as described in this data sheet, are designed to prevent the destruction of the IC and these fault conditions are considered ‘outside’
the normal operating ranges. It is important to note that the protection functions integrated into this device are NOT designed for continuous repetitive operation.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
---
6.0
14.0
26.0
V
V
BATT
=
13V, V
INA
=
V
INB
=
5V
V
BATT
=
18V, V
INA
=
V
INB
=
1.5V
-
9.3
15
mA
-
0.2
5
mA
r
DS(ON)
On Resistance - Excitation Path
V
BATT
=
13V, V
INA
=
V
INB
=
5V,
I
OUT
=
5A
V
BATT
=
13V, V
INA
=
5V,
V
INB
=
0V, I
OUT
=
10A
-
0.030
0.080
Ω
Ω
T
C
=
150
o
C
-
0.050
0.100
V
Recir(sat)
Saturation Voltage - Recirculation
Path
-
1.4
1.8
V
V
BATT
=
14V, R
Load
=
2.5
Ω
-
7.0
30
μ
s
μ
s
μ
s
μ
s
-
8.3
30
-
6.5
10
-
3.0
10
---
-
-
1.5
V
---
3.5
-
-
V
I
IN
<=
10mA
V
INA
=
V
INB
=
5V
V
INA
=
V
INB
=
1.5V
5.5
-
-
V
μ
A
μ
A
I
IN
Input Current (each input)
-
90
160
20
60
-
T
J(tsd)
---
160
172
185
o
C
I
OUT(trip)
V
BATT(ov)
V
BATT(uv)
I
OUT(ol)
V
OUT(SS)
R
SS
T
SS
V
OUT(cl1)
V
OUT(cl2)
Output Current Trip
---
15
20
30
A
Over-voltage Threshold
---
27
29
32
V
Under-voltage Threshold
---
-
5.1
5.5
V
Open Load Detect Current
V
INA
=
5V, V
INB
=
falling edge
INA=0, INB=1, V
BATT
V
OUT
INA=0, INB=1, from V
OUT
to V
BATT
INA=0, INB=1, time R
SS
is active
Ref to GND; I
OUT
=
5A
V
OUT
V
BATT
; I
OUT
=
5A
Threshold where DIAG goes low
during Fast turn-off Mode
Fast turn-off Mode; V
DIAG
=
1V
---
300
450
800
mA
Soft Short Detect Voltage
0.3
0.43
0.6
V
Ω
Soft Short Resistance
50
75
140
Soft Short Active Time
1
-
3
ms
NDMOS Over-voltage Clamp
60
73
85
V
Output Inductive Clamp Voltage
27
30
33
V
V
FB
Flyback Diagnostic Threshold
Voltage (V
OUT
V
BATT
)
Diagnostic Propagation Delay Time
22
23
33
V
td
(DIAG)
t
DAIGFB
(min)
Minimum Diagnostic Flyback Time
-
3
10
μ
s
μ
s
26
42
50
t
DIAG(prot)
Protection Diagnostic Pulse Width
Over-voltage, Under-voltage,
Over-current, Over-temperature
I
DIAG
<=
1mA,
Diagnostic output active
I
DIAG
<=
10mA
2
7
10
μ
s
V
DIAG(low)
Diagnostic Voltage Low
-
-
0.9
V
V
DIAG(cl)
Diagnostic Output Clamp Voltage
5.5
-
-
V
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