參數(shù)資料
型號: FDMS2380
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 外設及接口
英文描述: 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 2K; RAM: 192; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 250 (@8MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLSP0020JB-A (20P2F-A)
中文描述: HALF BRIDGE BASED PRPHL DRVR, QCC18
封裝: QFN-18
文件頁數(shù): 3/15頁
文件大小: 388K
代理商: FDMS2380
F
FDMS2380 Rev. A
www.fairchildsemi.com
3
Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Ordering Information
Notes:
1.
R
θ
JA
is measured with 1.0 in
2
copper on FR-4 board. R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user’s board design.
2.
The FDMS2380 requires one or more high quality local bypass capacitors (i.e., low ESL, low ESR and located physically close to the VBATT/Ground terminals of
the device) to prevent fast transients on the V
BATT
line from affecting the operation of the device. More specifically, the bypass scheme must reduce transients
with an amplitude passing through V
BATT(ov)
to have a rise time of less than 2.2V/μs.
Symbol
I
OUT(rev)
V
BATT(max)
I
IN
V
IN(max)
I
DIAG
V
DIAG(max)
Parameter
Ratings
-4
Units
A
Maximum Reverse Output Current
Maximum DC Supply Voltage (Note 2)
60
V
Input Currents
10
mA
Maximum Input Voltage
8
V
Diagnostic Output Current
10
mA
Maximum Diagnostic Output Voltage
8
V
P
D
Total Power dissipation
7
W
Power dissipation V
BATT
pad
Power dissipation OUT pads: P
D(OUT)
=
P
D(OUT1)
+
P
D(OUT2)
Operating and Storage Temperature
2.3
W
4.6
W
o
C
T
J
, T
STG
-40 to 160
R
θ
JC
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case: OUT pad
3.5
o
C/W
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Case: V
BATT
pad
Thermal Resistance Junction to Ambient: OUT pad (Note 1)
4.0
60
Thermal Resistance Junction to Ambient: V
BATT
pad (Note 1)
60
Part Number
Package
Packing
Method
Tape & Reel
Reel Size
Tape Width
Quantity
FDMS2380
18 pin QFN
330mm
24mm
2000
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