參數(shù)資料
型號(hào)： FDMS3572_07
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel UltraFET Trench㈢ MOSFET 80V, 22A, 16.5mз
中文描述： N溝道UltraFET海溝㈢MOSFET的80V的，22A條，16.5mз
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 525K
代理商： FDMS3572_07
F
M
2007 Fairchild Semiconductor Corporation
FDMS3572 Rev.C1
www.fairchildsemi.com
1
tm
February 2007
FDMS3572
N-Channel UltraFET Trench
MOSFET
80V, 22A, 16.5m
Features
Max r
DS(on)
= 16.5m
at V
GS
= 10V, I
D
= 8.8A
Max r
DS(on)
= 24m
at V
GS
= 6V, I
D
= 8.4A
Typ Qg = 28nC at V
GS
= 10V
Low Miller Charge
Optimized efficiency at high frequencies
RoHS Compliant
General Description
UItraFET
benchmark efficiency in power conversion applications.
Optimized for r
DS(on)
, low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Application
devices combine characteristics that enable
DC - DC
Conversion
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
80
±20
22
48
8.8
50
78
2.5
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T
C
= 25°C
-Continuous (Silicon limited)
T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
1.6
°C/W
Thermal Resistance, Junction to Ambient (Note 1a)
50
Device Marking
FDMS3572
Device
FDMS3572
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
G
S
S
S
Pin 1
Power 56 (Bottom view)
D
D
D
D
4
3
2
1
5
6
7
8
G
S
S
S
D
D
D
D
相關(guān)PDF資料
PDF描述
FDMS3572 N-Channel UltraFET Trench MOSFET 80V, 22A, 16.5mOHM
FDMS3672 N-Channel UltraFET Trench MOSFET 100V, 22A, 23mohm
FDMS5672 N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mohm
FDMS8660AS N-Channel PowerTrench㈢ SyncFET 30V, 49A, 2.1mヘ
FDMS8660S N-Channel PowerTrench SyncFET (30V, 40A, 2.4mOHM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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FDMS3602S 功能描述:MOSFET 25V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS3604AS 功能描述:MOSFET 30V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS3606AS 功能描述:MOSFET 30V Asymtrc Dual NCh PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS36101L_F085 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-Channel Power Trench MOSFET 100V, 38A, 26m
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