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參數資料
| 型號： | FDMS2380 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 外設及接口 |
| 英文描述： | 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 2K; RAM: 192; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 250 (@8MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLSP0020JB-A (20P2F-A) |
| 中文描述： | HALF BRIDGE BASED PRPHL DRVR, QCC18 |
| 封裝： | QFN-18 |
| 文件頁數： | 10/15頁 |
| 文件大?。?/td> | 388K |
| 代理商： | FDMS2380 |
F
FDMS2380 Rev. A
www.fairchildsemi.com
10
Typical Characteristics
T
C
= 25°C unless otherwise noted
Figure 7. Self Clamped Inductive Switching
Energy vs Inductance
Figure 8. Self Clamped Inductive Switching
Energy vs Inductance
Figure 9. Self Clamped Inductive Switching
Current vs Inductance
Figure 10. Self Clamped Inductive Switching
Current vs Inductance
Figure 11. Self Clamped Inductive Switching
Current vs Time in Clamp
Figure 12. Output Clamp Voltage vs Case
Temperature
40
60
80
100
120
140
160
0
2
4
6
8
L, INDUCTANCE (mH)
E
S
,
E
Single Pulse
V
Batt
= 14V
T
J
= 25
o
C
T
J
= 150
o
C
10
40
60
80
100
120
140
160
180
200
220
L, INDUCTANCE (mH)
E
S
,
E
T
J
= 25
o
C
T
J
= 150
o
C
Single Pulse
V
Batt
= 14V
0
10
20
30
40
50
3
6
9
12
15
I
S
,
L, INDUCTANCE (mH)
C
T
J
= 25
o
C
T
J
= 150
o
C
Single Pulse
V
Batt
= 14V
0
2
4
6
8
10
0
3
6
9
12
15
I
S
,
L, INDUCTANCE (mH)
C
T
J
= 25
o
C
T
J
= 150
o
C
0
10
20
30
40
50
Single Pulse
V
Batt
= 14V
1
10
20
0.1
1
10
I
S
,
t
CLP
, TIME IN CLAMP (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
Single Pulse
V
Batt
= 14V
C
20
30
40
50
60
70
80
-40
0
40
80
120
160
V
O
,
T
C
, CASE TEMPERATURE (
o
C)
NDMOS Over-voltage Clamp
(ref to gnd)
I
OUT
= 5A
Output Inductive Clamp Voltage
(V
OUT
- V
BATT
)
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| FDMS2504SDC | 功能描述:MOSFET 25V N-Chan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS2506SDC | 功能描述:MOSFET 25V N-Chan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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