參數(shù)資料
型號: FDMC2674
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel UltraFET Trench MOSFET
中文描述: 1 A, 220 V, 0.366 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 3.30 X 3.30 MM, ROHS COMPLIANT, MLP-8
文件頁數(shù): 4/6頁
文件大?。?/td> 303K
代理商: FDMC2674
F
FDMC2674 Rev. E
www.fairchildsemi.com
4
Figure 7.
0
3
6
9
12
15
0
2
4
6
8
10
I
D
= 1A
V
DD
= 100V
V
G
,
Q
g
, GATE CHARGE(nC)
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1
10
100
1000
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
4000
Capacitance vs Drain to Source Voltage
Figure 9.
10
-2
10
-1
10
0
10
1
10
2
0.1
1
T
J
= 25
o
C
T
J
= 125
o
C
I
A
,
(
A
)
5
t
AV
, TIME IN AVALANCHE(ms)
Unclamped Inductive Switching
Capability
Figure 10.
25
50
T
A
, AMBIENT TEMPERATURE
(
o
C
)
75
100
125
150
0.0
0.5
1.0
1.5
2.0
V
GS
= 10V
I
D
,
R
θ
JA
= 52
o
C/W
Maximum Continuous Drain Current
vs Ambient Temperature
Figure 11.
0.1
1
10
100
1000
1E-3
0.01
0.1
1
10
100
10us
1s
10s
DC
100us
1ms
10ms
100ms
SINGLE PULSE
T
J
=MAX RATED
T
A
=
25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY R
DS(ON)
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Forward Bias Safe Operating Area
Figure 12.
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
1000
P
(
P
)
,
t, PULSE WIDTH (s)
V
GS
= 10V
SINGLE PULSE
3000
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
-------125
Single Pulse Maximum Power
Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMC2674 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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FDMC2674_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366m??
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FDMC3300NZA 功能描述:MOSFET 20V 8A 26 OHM MONOLITHIC COMM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube