參數(shù)資料
型號(hào)： FDMC2674
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel UltraFET Trench MOSFET
中文描述： 1 A, 220 V, 0.366 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： 3.30 X 3.30 MM, ROHS COMPLIANT, MLP-8
文件頁數(shù)： 2/6頁
文件大?。?/td> 303K
代理商： FDMC2674
F
FDMC2674 Rev. E
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
I
D
= 250
μ
A, referenced to
25°C
V
DS
= 176V, V
GS
= 0V
V
GS
= ±20V,
220
V
248
mV/°
C
1
μ
A
nA
±100
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 250
μ
A, referenced to
25°C
V
GS
= 10V, I
D
= 1A
V
GS
= 10V, I
D
= 1A,
T
J
=150
o
C
2
3.4
4
V
-10.2
mV/°C
r
DS(on)
Drain to Source On Resistance
305
366
m
678
814
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=100V, V
GS
= 0V,
f = 1MHz
880
70
11
1180
95
20
pF
pF
pF
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain Charge
V
DD
= 100V, I
D
= 1A
V
GS
= 10V, R
GS
= 2.4
9
18
23
27
34
18
ns
ns
ns
ns
nC
nC
nC
13
15
21
12.7
3.8
2.9
V
DD
= 15V, V
GS
= 10V,
I
D
= 1A, I
G
= 1.0mA
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1:
R
is determined with the device mounted on a 1in
2
oz.copper pad on a 1.5x1.5 in board of FR-4 material .R
θ
JC
are guaranteed by design while R
θ
JA
is
determined by the user’s board design.
Source to Drain Diode Forward Voltage V
GS
= 0V, I
S
= 1A
Reverse Recovery Time
Reverse Recovery Charge
0.8
1.5
60
109
V
ns
nC
I
F
= 1A, di/dt = 100A/
μ
s
I
F
= 1A, di/dt = 100A/
μ
s
2:
Pulse Test:Pulse Width < 300
μ
s, Duty Cycle < 2.0%.
3:
Starting T
J
=
25°C, L = 3mH, I
AS
= 3A, V
DD
= 50V, V
GS
= 10V.
b. 108
°C/W when mounted on
a minimum pad of 2 oz copper
a.
52
°C/W when mounted on
a 1 in
2
pad of 2 oz copper
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMC2674 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDMC2674_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ
FDMC2674_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366m??
FDMC3020DC 功能描述:MOSFET 30V NChan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC3300NZA 功能描述:MOSFET 20V 8A 26 OHM MONOLITHIC COMM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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