參數(shù)資料
型號(hào): FDMC2610
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: N-Channel UltraFET Trench MOSFET(200V, 9.5A, 200mohm)
中文描述: 2.2 A, 200 V, 0.397 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, MLP3.3X3.3, 8 PIN
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 273K
代理商: FDMC2610
F
M
FDMC2610 Rev.
B
www.fairchildsemi.com
4
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
0
3
6
9
12
15
0
2
4
6
8
10
V
DD
= 100V
V
DD
=50V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 150V
0.1
1
10
100
10
100
1000
f = 1MHz
V
GS
= 0V
C
rss
C
oss
C
iss
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
-3
10
-2
10
-1
10
0
1
2
3
4
T
J
= 25
o
C
T
J
= 125
o
C
I
A
,
(
A
)
t
AV
, TIME IN AVALANCHE(ms)
25
50
T
C
, CASE TEMPERATURE
(
75
100
125
150
0
2
4
6
8
10
R
θ
JC
= 3
o
C/W
V
GS
= 6V
V
GS
= 10V
I
D
,
o
C
)
0.1
1
10
100
1E-3
0.01
0.1
1
10
10s
DC
1s
100ms
10ms
1ms
100us
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25
O
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
D
,
VDS, DRAIN to SOURCE VOLTAGE (V)
30
700
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
0.5
V
GS
= 10V
SINGLE PULSE
P
(
P
)
,
t, PULSE WIDTH (s)
200
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
-----------------------
T
A
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