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參數(shù)資料
| 型號： | FDMC2610 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel UltraFET Trench MOSFET(200V, 9.5A, 200mohm) |
| 中文描述： | 2.2 A, 200 V, 0.397 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, MLP3.3X3.3, 8 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 273K |
| 代理商： | FDMC2610 |
F
M
FDMC2610 Rev.
B
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BV
DSS
BV
DSS
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, V
GS
= 0V
200
V
I
D
= 250
μ
A, referenced to 25°C
199
mV/°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 160V,
V
GS
= 0V
V
GS
= ±20V, V
GS
= 0V
1
μ
A
T
J
= 125°C
10
±100
I
GSS
Gate to Source Leakage Current
nA
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
2
3.2
4
V
I
D
= 250
μ
A, referenced to 25°C
-9.9
mV/°C
r
DS(on)
Drain to Source On Resistance
V
GS
= 10V, I
D
= 2.2A
V
GS
= 6V, I
D
= 1.5A
V
GS
= 10V, I
D
= 2.2A T
J
= 125°C
V
DS
= 5V, I
D
= 2.2A
175
188
347
7
200
215
397
m
g
FS
Forward Transconductance
S
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 100V, V
GS
= 0V,
f = 1MHz
720
41
12
0.7
960
55
20
pF
pF
pF
f = 1MHz
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= 100V, I
D
= 2.2A
V
GS
= 10V, R
GEN
= 24
17
13
29
16
12.3
3
3.6
31
24
47
29
18
ns
ns
ns
ns
nC
nC
nC
V
GS
= 0V to 10V V
DD
= 100V
I
D
= 2.2A
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 2.2A (Note 2)
0.8
69
114
1.2
104
171
V
ns
nC
I
F
= 2.2A, di/dt = 100A/
μ
s
Notes:
1:
R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5
x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while
R
θ
CA
is determined by
the user's board design.
2:
Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
a. 60°C/W when mounted on
a 1 in
pad of 2 oz copper
b. 150°C/W when mounted on a
minimum pad of 2 oz copper
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMC2610 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 200V 9.5A POWER33-8 |
| FDMC2610 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDMC2610_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench㈢ MOSFET 200V, 9.5A, 200mヘ |
| FDMC2610_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench?? MOSFET 200V, 9.5A, 200m?? |
| FDMC2674 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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