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參數(shù)資料
| 型號(hào)： | FDM6296 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | CAP CER 47000PF 100V Y5V 1206 |
| 中文描述： | 11.5 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3.30 X 3.30 MM, LEAD FREE, MLP-8 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 471K |
| 代理商： | FDM6296 |
3
www.fairchildsemi.com
FDM6296 Rev. D
F
Typical Characteristics
R
D
,
D
30
4.5V
25
20
15
10
5
0
0
0.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.4
0.6
I
D
,
0.8
1
1.6
1.4
1.2
1
0.5
0.6
-50
-25
0
25
T
J
, JUNCTION TEMPERATURE (
°
C)
50
75
100
125
150
R
D
,
0.025
0.02
0.015
0.01
0.005
2
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
8
10
I
D
,
40
30
20
10
0
0.5
1
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
2.5
3
3.5
I
S
,
0.1
1
10
100
0.01
0.001
0.0001
2
0.2
V
GS
, BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
2
1.8
1.6
1.4
1.2
1
0
0
4
8
12
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
R
D
,
D
16
20
4.0V
V
GS
= 10.0V
V
GS
= 3.0V
3.5V
4.0V
4.5V
5.0V
6.0V
10.0V
V
GS
= 10.0V
I
D
= 11.5V
V
DS
= 5V
V
GS
= 0V
I
D
= 5.8A
T
A
= 125
°
C
T
A
= 125
°
C
T
A
= 125
°
C
T
A
= 25
°
C
3.5V
3.0V
2.5V
25
°
C
25
°
C
-55
°
C
-55
°
C
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