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參數(shù)資料
| 型號(hào)： | FDM6296 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | CAP CER 47000PF 100V Y5V 1206 |
| 中文描述： | 11.5 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3.30 X 3.30 MM, LEAD FREE, MLP-8 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 471K |
| 代理商： | FDM6296 |
2
www.fairchildsemi.com
FDM6296 Rev. D
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Notes:
1. R
θ
θ
JA
JC
is determined with the device mounted on a 1 in_ 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material.
are guaranteed by design while R
θ
JA
is determined by the user’s board design.
(a). R
θ
JA
= 52°C/W when mounted on a 1in
pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b). R
θ
JA
= 108°C/W when mounted on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
R
2
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
T
Drain–Source Breakdown Voltage
V
GS
= 250 μA, Referenced to 25°C
= 0 V, I
D
= 250 μA
30
V
DSS
J
Breakdown Voltage Temperature
Coefficient
I
D
29
mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
μA
I
GSS
On Characteristics
Gate–Body Leakage
V
GS
= ±20 V, V
DS
= 0 V
±100
nA
(Note 2)
V
GS(th)
V
GS(th
T
J
R
DS(on)
Gate Threshold Voltage
V
DS
= 250 μA, Referenced to 25°C
= V
GS
, I
D
= 250 μA
1
1.9
3
V
)
Gate Threshold Voltage
Temperature Coefficient
I
D
–5
mV/°C
Static Drain–Source
On–Resistance
V
V
V
GS
GS
GS
= 10 V, I
= 4.5 V, I
= 10 V, I
D
D
D
=11.5 A
= 11.5 A
= 10 A
= 11.5A, T
J
= 125°C
8.7
10.6
13
10.5
15
17
m
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
47
S
Dynamic Characteristics
C
iss
Input Capacitance
V
f = 1.0 MHz
DS
= 15 V, V
GS
= 0 V,
1507
pF
C
oss
Output Capacitance
415
pF
C
rss
Reverse Transfer Capacitance
128
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.1
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
V
V
DD
GS
= 15 V, I
= 10 V, R
D
= 1 A,
= 6
GEN
10
20
ns
t
r
Turn–On Rise Time
5
10
ns
t
d(off)
Turn–Off Delay Time
27
44
ns
t
f
Turn–Off Fall Time
13
23
ns
Q
g
Total Gate Charge
V
V
DS
GS
= 15 V, I
= 5 V
D
= 11.5 A,
12
17
nC
Q
gs
Gate–Source Charge
4
nC
Q
gd
Gate–Drain Charge
3
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
2
A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2 A (Note 2)
0.9
1.2
V
t
rr
Diode Reverse Recovery Time
I
d
F
= 11.5 A,
/d
t
= 100 A/μs
iF
29
nS
Q
rr
Diode Reverse Recovery Charge
20
nC
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