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參數(shù)資料
| 型號(hào)： | FDMA1029PZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual P-Channel PowerTrench MOSFET |
| 中文描述： | 3100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC |
| 封裝： | 2 X 2 MM, 0.80 MM HEIGHT, HALOGEN FREE, ROHS COMPLIANT, MICROFET-6 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 126K |
| 代理商： | FDMA1029PZ |
May 2006
2006 Fairchild Semiconductor Corporation
FDMA1029PZ Rev B (W)
FDMA1029PZ
Dual P-Channel PowerTrench
MOSFET
General Description
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two
independent P-Channel MOSFETs with low on-state
resistance for minimum conduction losses. When
connected in the typical common source configuration,
bi-directional current flow is possible.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
Features
–3.1 A, –20V. R
DS(ON)
= 95 m
@ V
GS
= –4.5V
R
DS(ON)
= 141 m
@ V
GS
= –2.5V
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
RoHS Compliant
3
2
1
4
5
6
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Drain Current – Continuous
I
D
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
–20
±
12
–3.1
–6
1.4
0.7
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
86 (Single Operation)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
(Note 1b)
(Note 1c)
(Note 1d)
°
C/W
Package Marking and Ordering Information
Device Marking
Device
029
FDMA1029PZ
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
MicroFET 2x2
S1
G1
D1
S2
G2
D2
PIN 1
S1 G1 D2
D1 G2 S2
D1 D2
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| FDMA2002NZ | 30V N-Channel PowerTrench MOSFET |
| FDMA291P | Single P-Channel 1.8V Specified PowerTrench MOSFET |
| FDMA420NZ_0609 | Single N-Channel 2.5V Specified PowerTrench MOSFET 20V, 5.7A, 30mз |
| FDMA420NZ | Single N-Channel 2.5V Specified PowerTrench MOSFET 20V, 5.7A, 30m Ohm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMA1029PZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
| FDMA1032CZ | 功能描述:MOSFET 20V Complementary PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA1032CZ | 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET 20V MICROFET 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET, 20V, MICROFET |
| FDMA1032CZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20V Complementary PowerTrench㈢ MOSFE |
| FDMA1430JP | 功能描述:MOSFET P-Chan -30V -2.9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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