參數(shù)資料
型號(hào)： FDD4685
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 40V P-Channel PowerTrench MOSFET -40V -32A 27m ohm
中文描述： 8.4 A, 40 V, 0.042 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： DPAK-3
文件頁數(shù)： 3/6頁
文件大小： 366K
代理商： FDD4685
F
M
FDD4685 Rev.B
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
0
20
40
60
80
100
V
GS
=
-4V
V
GS
= -6V
V
GS
= -4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= -3V
V
GS
=
-10V
-
D
,
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
20
40
60
80
100
0.6
1.0
1.4
1.8
2.2
2.6
3.0
V
GS
= -4.5V
V
GS
= -6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
-I
D
, DRAIN CURRENT(A)
V
GS
= -4V
V
GS
= -3V
V
GS
=
-10V
Normalized On-Resistance
Figure 3. Normalized On Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
=-8.4A
V
GS
= -10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
2
3
-V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
4
5
6
7
8
9
10
20
30
40
50
60
70
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= -8.4A
r
D
,
S
(
m
)
Figure 5. Transfer Characteristics
1
2
3
4
5
6
0
20
40
60
80
100
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
-
D
,
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.4
0.6
0.8
1.0
1.2
0.1
1
10
40
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
-
S
,
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD4685_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench? MOSFET -40V, -32A, 35mΩ
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FDD4685-CUT TAPE 制造商:FAIRCHILD 功能描述:FDD4685 Series 40 V 27 mOhm P-Channel PowerTrench Mosfet TO-252
FDD4685TF_SB82135 功能描述:MOSFET -40V/-32A/27 OHM PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD4N60NZ 功能描述:MOSFET 2.5A Output Current GateDrive Optocopler RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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