- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375771 > FDD4685 (FAIRCHILD SEMICONDUCTOR CORP) 40V P-Channel PowerTrench MOSFET -40V -32A 27m ohm PDF資料下載
參數(shù)資料
| 型號： | FDD4685 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 40V P-Channel PowerTrench MOSFET -40V -32A 27m ohm |
| 中文描述： | 8.4 A, 40 V, 0.042 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 366K |
| 代理商： | FDD4685 |
F
M
FDD4685 Rev.B
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= –250
μ
A, V
GS
= 0V
–40
V
I
D
= –250
μ
A, referenced to 25°C
–33
mV/°
C
V
DS
= –32V, V
GS
= 0V
V
GS
= ±20V, V
GS
= 0V
–1
±100
μ
A
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= –250
μ
A
–1
–1.6
–3
V
I
D
= –250
μ
A, referenced to 25°C
4.9
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= –10V, I
D
= –8.4A
V
GS
= –4.5V, I
D
= –7A
V
GS
= –10V, I
D
= –8.4A, T
J
=125°C
V
DS
= –5V, I
D
= –8.4A
23
30
33
23
27
35
42
m
g
FS
Forward Transconductance
S
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= –20V, V
GS
= 0V,
f = 1MHz
1790
260
140
4
2380
345
205
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= –20V, I
D
= –8.4A
V
GS
= –10V, R
GEN
= 6
8
16
27
55
26
27
ns
ns
ns
ns
nC
nC
nC
15
34
14
19
5.6
6.1
V
DD
=–20V, I
D
= –8.4A
V
GS
= –5V
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= –8.4A (Note 2)
–0.85
30
31
–1.2
45
47
V
ns
nC
I
F
= –8.4A, di/dt = 100A/
μ
s
Notes:
1:
R
θ
JA
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user’s board design.
a. 40°C/W when mounted on a 1 in
2
pad of 2 oz copper
2:
Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
3:
Starting T
J
= 25°C, L = 3mH, I
AS
= 9A, V
DD
= 40V, V
GS
= 10V.
b. 96°C/W when mounted on a minimum pad.
相關PDF資料 |
PDF描述 |
|---|---|
| FDD5202P | P-Channel, Logic Level, MOSFET |
| FDD5612 | 2MM SOCKET STRIPS |
| FDD5614 | 60V P-Channel PowerTrench MOSFET |
| FDD5614P | 60V P-Channel PowerTrench MOSFET |
| FDD5670 | 60V N-Channel PowerTrenchTM MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDD4685_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench? MOSFET -40V, -32A, 35mΩ |
| FDD4685_F085 | 功能描述:MOSFET Trans MOS P-Ch 40V 8.4A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD4685-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDD4685 Series 40 V 27 mOhm P-Channel PowerTrench Mosfet TO-252 |
| FDD4685TF_SB82135 | 功能描述:MOSFET -40V/-32A/27 OHM PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD4N60NZ | 功能描述:MOSFET 2.5A Output Current GateDrive Optocopler RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。