參數(shù)資料
型號(hào)： FDD45AN06LA0
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET 60V, 22A, 45m
中文描述： 5.2 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： TO-252AA, 3 PIN
文件頁(yè)數(shù)： 4/11頁(yè)
文件大?。?/td> 228K
代理商： FDD45AN06LA0
2004 Fairchild Semiconductor Corporation
FDD45AN06LA0 Rev. A
F
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25°C unless otherwise noted
0.1
1
10
100
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
C
SINGLE PULSE
LIMAREA MAY BE
DS(ON)
OPERATION IN THIS
10
μ
s
1ms
DC
100
μ
s
10ms
1
10
100
0.001
0.01
t
AV
, TIME IN AVALANCHE (ms)
0.1
1
10
I
A
,
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
0
10
20
30
40
2
3
4
5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
10
20
30
40
0
0.5
1.0
1.5
2.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3V
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 5V
40
60
80
2
4
6
8
10
20
I
D
= 1A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 25A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 25A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
相關(guān)PDF資料
PDF描述
FDD4685 40V P-Channel PowerTrench MOSFET -40V -32A 27m ohm
FDD5202P P-Channel, Logic Level, MOSFET
FDD5612 2MM SOCKET STRIPS
FDD5614 60V P-Channel PowerTrench MOSFET
FDD5614P 60V P-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD45AN06LA0 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDD45AN06LA0_F085 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD4685 功能描述:MOSFET -40V P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD4685_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench? MOSFET -40V, -32A, 35mΩ
FDD4685_F085 功能描述:MOSFET Trans MOS P-Ch 40V 8.4A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*