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參數(shù)資料
| 型號： | FDD45AN06LA0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 60V, 22A, 45m |
| 中文描述： | 5.2 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252AA, 3 PIN |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 228K |
| 代理商： | FDD45AN06LA0 |
2004 Fairchild Semiconductor Corporation
FDD45AN06LA0 Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 5V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
J
= 25°C, L = 90
μ
H, I
AS
= 18A.
Device Marking
FDD45AN06LA0
Device
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
FDD45AN06LA0
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 50V
V
GS
= 0V
V
GS
=
±
20V
60
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 25A, V
GS
= 10V
I
D
= 22A, V
GS
= 5V
I
D
= 22A, V
GS
= 5V,
T
J
= 175
o
C
1
-
-
-
3
V
r
DS(ON)
Drain to Source On Resistance
0.031
0.039
0.036
0.045
-
0.090
0.104
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
880
90
40
8.3
0.9
2.8
1.9
3.4
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V
I
D
= 22A
I
g
= 1.0mA
11
1.2
-
-
-
-
-
-
-
V
DD
= 30V, I
D
= 22A
V
GS
= 5V, R
GS
= 18
-
-
-
-
-
-
-
135
-
-
-
-
73
ns
ns
ns
ns
ns
ns
22
68
21
28
-
V
SD
Source to Drain Diode Voltage
I
SD
= 22A
I
SD
= 11A
I
SD
= 22A, dI
SD
/dt = 100A/
μ
s
I
SD
= 22A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
33
25
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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| FDD45AN06LA0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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| FDD4685_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench? MOSFET -40V, -32A, 35mΩ |
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