參數(shù)資料
型號: FDD26AN06A0
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 7 A, 60 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: DPAK-3
文件頁數(shù): 9/11頁
文件大小: 609K
代理商: FDD26AN06A0
2004 Fairchild Semiconductor Corporation
FDD26AN06A0 Rev. A
F
SABER Electrical Model
rev July 2004
template FDD26AN06A0 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=3.8e-12,nl=1.06,rs=4.2e-3,trs1=2e-3,trs2=1.1e-6,cjo=5.8e-10,m=0.53,tt=2.5e-8,xti=3.9)
dp..model dbreakmod = (rs=1.8,trs1=1e-4,trs2=-1e-6)
dp..model dplcapmod = (cjo=2.13e-10,isl=10e-30,nl=10,m=0.43)
m..model mmedmod = (type=_n,vto=3.4,kp=2.8,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=4.1,kp=21,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=2.96,kp=0.03,is=1e-30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-3)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-3,voff=-4)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-2.0,voff=-0.5)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=-0.5,voff=-2.0)
c.ca n12 n8 = 3.2e-10
c.cb n15 n14 = 3.2e-10
c.cin n6 n8 = 7.7e-10
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 65.4
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
i.it n8 n17 = 1
l.lgate n1 n9 = 4.9e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 2.5e-9
res.rlgate n1 n9 = 49
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 25
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=9e-4,tc2=-6e-7
res.rdrain n50 n16 = 4e-3, tc1=7e-4,tc2=3.3e-5
res.rgate n9 n20 = 3.8
res.rslc1 n5 n51 = 1e-6, tc1=2.5e-3,tc2=1e-5
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 7e-3, tc1=9e-3,tc2=9e-6
res.rvthres n22 n8 = 1, tc1=-4e-3,tc2=-1e-5
res.rvtemp n18 n19 = 1, tc1=-3e-3,tc2=1e-7
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/110))** 2.7))
}
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
相關(guān)PDF資料
PDF描述
FDD306P P-Channel 1.8V Specified PowerTrench MOSFET
FDD3570 80V N-Channel PowerTrench MOSFET
FDD3580 80V N-Channel PowerTrench MOSFET
FDD3670 RECTIFIER STANDARD SINGLE 1A 100V 100 30A-ifsm 5uA-ir 1V-vf DO-41 5K/AMMO
FDD3672 N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD26AN06A0_11 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 36A, 26m??
FDD26AN06A0_F085 功能描述:MOSFET 60V N-CHAN PwrTrench 60V 36A 26mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD3 制造商:Cooper Crouse-Hinds 功能描述:
FDD300004 功能描述:OSC 133MHZ 3.3V SMD RoHS:是 類別:晶體和振蕩器 >> 振蕩器 系列:SaRonix-eCera™ FD 標準包裝:1 系列:VG-4512CA 類型:VCXO 頻率:153.6MHz 功能:三態(tài)(輸出啟用) 輸出:LVPECL 電源電壓:3.3V 頻率穩(wěn)定性:- 工作溫度:-40°C ~ 85°C 電流 - 電源(最大):60mA 額定值:- 安裝類型:表面貼裝 尺寸/尺寸:0.276" L x 0.197" W(7.00mm x 5.00mm) 高度:0.071"(1.80mm) 封裝/外殼:6-SMD,無引線(DFN,LCC) 包裝:Digi-Reel® 電流 - 電源(禁用)(最大):- 其它名稱:SER3790DKR
FDD3005F 制造商:ELM 功能描述:FILTER ELMEC