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參數(shù)資料
| 型號： | FDD26AN06A0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 7 A, 60 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 609K |
| 代理商： | FDD26AN06A0 |
2004 Fairchild Semiconductor Corporation
August 2004
FDD26AN06A0 Rev. A
F
FDD26AN06A0
N-Channel PowerTrench
MOSFET
60V, 36A, 26m
Features
r
DS(ON)
= 20m
(Typ.), V
GS
= 10V, I
D
= 36A
Q
g
(tot) = 13nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Q
RR
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 82544
Applications
Motor / Body Load Control
ABS Systems
Powertrain Management
Injection Systems
DC-DC converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 12V and 24V systems
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
60
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, R
θ
JA
= 52
o
C/W)
Pulsed
Single Pulse Avalanche Energy ( Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
36
25
7
A
A
A
A
Figure 4
35
75
0.5
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
2.0
100
52
o
C/W
o
C/W
o
C/W
D
G
S
TO-252AA
FDD SERIES
GATE
SOURCE
(FLANGE)
DRAIN
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD26AN06A0_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 36A, 26m?? |
| FDD26AN06A0_F085 | 功能描述:MOSFET 60V N-CHAN PwrTrench 60V 36A 26mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD3 | 制造商:Cooper Crouse-Hinds 功能描述: |
| FDD300004 | 功能描述:OSC 133MHZ 3.3V SMD RoHS:是 類別:晶體和振蕩器 >> 振蕩器 系列:SaRonix-eCera™ FD 標(biāo)準(zhǔn)包裝:1 系列:VG-4512CA 類型:VCXO 頻率:153.6MHz 功能:三態(tài)（輸出啟用） 輸出:LVPECL 電源電壓:3.3V 頻率穩(wěn)定性:- 工作溫度:-40°C ~ 85°C 電流 - 電源（最大）:60mA 額定值:- 安裝類型:表面貼裝 尺寸/尺寸:0.276" L x 0.197" W（7.00mm x 5.00mm） 高度:0.071"（1.80mm） 封裝/外殼:6-SMD，無引線（DFN，LCC） 包裝:Digi-Reel® 電流 - 電源（禁用）（最大）:- 其它名稱:SER3790DKR |
| FDD3005F | 制造商:ELM 功能描述:FILTER ELMEC |
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