參數(shù)資料
型號： FDD2612
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 200V N-Channel PowerTrench MOSFET
中文描述： 4.9 A, 200 V, 0.72 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： DPAK-3
文件頁數(shù)： 2/5頁
文件大?。?/td> 110K
代理商： FDD2612
FDD2612 Rev B1(W)
)
ON
(
DS
D
R
P
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
Single Pulse,V
DD
= 100 V,I
D
= 1.5A
90
1.5
mJ
A
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 250
μ
A
200
V
I
D
= 250
μ
A, Referenced to 25
°
C
246
mV/
°
C
V
DS
= 160 V,
V
GS
= 20 V,
V
GS
= –20 V ,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
V
GS(th)
T
J
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On Resistance
On–State Drain Current
Forward Transconductance
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= 250
μ
A
2
4
4.5
V
– 8.6
mV/
°
C
R
DS(on)
V
GS
= 10 V,
V
GS
= 10 V, I
D
= 1.5 A,T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 10 V
V
DS
= 10 V,
I
D
= 1.5 A
I
D
= 1.5 A
600
1125
720
1422
m
I
D(on)
g
FS
5
A
S
4.4
234
18
8
pF
pF
pF
V
DS
= 100 V,
f = 1.0 MHz
V
GS
= 0 V,
(Note 2)
6
6
17
8
8
1.6
2.2
12
12
30
16
11
ns
ns
ns
ns
nC
nC
nC
V
DD
= 100 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 100 V,
V
GS
= 10 V
I
D
= 1.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
3.2
A
V
GS
= 0 V,
I
S
= 3.2 A
(Note 2)
0.8
1.2
V
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
= 40°C/W when mounted on a
1in
2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
b) R
JA
= 96°C/W when mounted
on a minimum pad.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
Maximum current is calculated as:
where P
D
is maximum power dissipation at T
C
= 25°C and R
DS(on)
is at T
J(max)
and V
GS
= 10V. Package current limitation is 21A
F
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