參數(shù)資料
型號(hào)： FDD2612
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 200V N-Channel PowerTrench MOSFET
中文描述： 4.9 A, 200 V, 0.72 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： DPAK-3
文件頁數(shù)： 1/5頁
文件大?。?/td> 110K
代理商： FDD2612
August 2001
2001 Fairchild Semiconductor Corporation
FDD2612 Rev B1 (W)
FDD2612
200V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Features
4.9 A, 200 V.
R
DS(ON)
= 720 m
@ V
GS
= 10 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching speed
Low gate charge (8nC typical)
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Ratings
200
±
20
4.9
10
Units
V
V
A
(Note 1a)
Power Dissipation
(Note 1)
42
3.8
1.6
(Note 1a)
P
D
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +175
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
3.5
40
96
°
C/W
°
C/W
°
C/W
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
FDD2612
FDD2612
Reel Size
13’’
Tape width
16mm
Quantity
2500 units
F
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FDD3 制造商:Cooper Crouse-Hinds 功能描述:
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