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參數(shù)資料
| 型號(hào)： | FDD2512 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 150V N-Channel PowerTrench MOSFET |
| 中文描述： | 6.7 A, 150 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 86K |
| 代理商： | FDD2512 |
FDD2512 Rev B2(W)
Typical Characteristics
0
2
4
6
8
10
0
1
2
3
Q
g
, GATE CHARGE (nC)
4
5
6
7
8
9
V
G
,
I
D
= 2.2A
V
DS
= 50V
100V
75V
0
100
200
300
400
500
0
25
50
75
100
125
150
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
10ms
1ms
100μs
10s
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
=96°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 96 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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|---|---|
| FDD25-12D1 | 制造商:CHINFA 制造商全稱:Chinfa Electronics Ind. Co., Ltd. 功能描述:DC - DC CONVERTER 20 ~ 30W SINGLE & DUAL OUTPUT |
| FDD25-12D2 | 制造商:CHINFA 制造商全稱:Chinfa Electronics Ind. Co., Ltd. 功能描述:DC - DC CONVERTER 20 ~ 30W SINGLE & DUAL OUTPUT |
| FDD25-12D3 | 制造商:CHINFA 制造商全稱:Chinfa Electronics Ind. Co., Ltd. 功能描述:DC - DC CONVERTER 20 ~ 30W SINGLE & DUAL OUTPUT |
| FDD25-12S1 | 制造商:CHINFA 制造商全稱:Chinfa Electronics Ind. Co., Ltd. 功能描述:DC - DC CONVERTER 20 ~ 30W SINGLE & DUAL OUTPUT |
| FDD25-12S2 | 制造商:CHINFA 制造商全稱:Chinfa Electronics Ind. Co., Ltd. 功能描述:DC - DC CONVERTER 20 ~ 30W SINGLE & DUAL OUTPUT |
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