參數(shù)資料
型號(hào): FDD2512
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 150V N-Channel PowerTrench MOSFET
中文描述: 6.7 A, 150 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: DPAK-3
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 86K
代理商: FDD2512
August 2001
2001 Fairchild Semiconductor Corporation
FDD2512 Rev B2(W)
FDD2512
150V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. These MOSFETs feature
faster switching and lower gate charge than other
MOSFETs with comparable R
DS(ON)
specifications. The
result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
N-Channel
MOSFET
has
been
designed
Features
6.7 A, 150 V
R
DS(ON)
= 420 m
@ V
GS
= 10 V
R
DS(ON)
= 470 m
@ V
GS
= 6 V
Low gate charge (8nC typical)
Fast switching
High performance trench technology for extremely
low R
DS(ON)
.
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation
P
D
Ratings
150
±
20
6.7
20
42
3.8
1.6
55 to +175
Units
V
V
A
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
3.5
40
96
°
C/W
°
C/W
°
C/W
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
FDD2512
FDD2512
Reel Size
13’’
Tape width
16mm
Quantity
2500 units
F
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