參數(shù)資料
型號: FDD2512
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 150V N-Channel PowerTrench MOSFET
中文描述: 6.7 A, 150 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: DPAK-3
文件頁數(shù): 3/5頁
文件大?。?/td> 86K
代理商: FDD2512
FDD2512 Rev B2(W)
Typical Characteristics
0
2
4
6
8
0
2
4
6
8
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
4.0V
V
GS
=10V
4.5V
6.0V
0.9
1
1.1
1.2
1.3
1.4
0
1
2
3
4
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 4.0V
5.0V
4.5V
10V
6.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
0.6
1
1.4
1.8
2.2
2.6
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 2.2A
V
GS
= 10V
0.2
0.3
0.4
0.5
0.6
0.7
0.8
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 1A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
2
3
4
5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
V
DS
= 25V
125
o
C
0.0001
0.001
0.01
0.1
1
10
0
0.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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