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參數(shù)資料
| 型號： | FDC658AP |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single P-Channel Logic Level PowerTrench㈢ MOSFET -30V, -4A, 50mOhm |
| 中文描述： | 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SUPERSOT-6 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 239K |
| 代理商： | FDC658AP |
F
FDC658AP Rev. B (W)
www.fairchildsemi.com
4
Figure 7.
0
2
4
6
8
10
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -4A
V
DS
= -5V
-10V
-15V
Gate Charge Characteristics
Figure 8.
0
150
300
450
600
0
6
12
18
24
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
Capacitance vs Drain to Source Voltage
Figure 9.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Forward Bias Safe Operating Area
-
D
,
DC
1s
100ms
100us
r
DS(on)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 156
o
C/W
T
A
= 25
o
C
10ms
1ms
Figure 10.
0
2
4
6
8
10
0.01
0.1
1
10
100
t, PULSE WIDTH (s)
P
SINGLE PULSE
R
θ
JA
= 156°C/W
T
A
= 25°C
Single Pulse Maximum Power
Dissipation
Figure 11.
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, RECTANGULAR PULSE DURATION
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 156
o
C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Typical Characteristics
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| FDC658P | 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC658P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6 |
| FDC658P | 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-CH. FET 50 MO SSOT6 |
| FDC658P-NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDC6901L | 功能描述:MOSFET Integ. Load Switch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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