參數(shù)資料
型號: FDC658AP
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Single P-Channel Logic Level PowerTrench㈢ MOSFET -30V, -4A, 50mOhm
中文描述: 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: ROHS COMPLIANT, SUPERSOT-6
文件頁數(shù): 3/5頁
文件大小: 239K
代理商: FDC658AP
F
FDC658AP Rev. B (W)
www.fairchildsemi.com
3
Typical Characteristics
Figure 1.
0
5
10
15
20
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
= -10V
-6.0V
-3.5V
-3.0V
-4.5V
-4.0V
-5.0V
On-Region Characteristics
Figure 2.
0.8
1
1.2
1.4
1.6
1.8
2
0
4
8
12
16
20
-I
D
, DRAIN CURRENT (A)
N
D
V
GS
= -4.5V
-6.0V
-5.0V
-8.0V
-7.0V
-10V
Normalized On-Resistance vs Drain
Current and Gate Voltage
Figure 3.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= -4.0A
V
GS
= -10V
Normalized On-Resistance vs Junction
Temperature
Figure 4.
0.02
0.06
0.1
0.14
0.18
0.22
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
O
I
D
= -2.0A
T
J
= 125
o
C
T
J
= 25
o
C
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
0
3
6
9
12
15
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
J
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
Figure 6.
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward Voltage
vs Source Current
-
S
,
V
GS
= 0V
T
J
= 125
o
C
25
o
C
-55
o
C
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