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參數(shù)資料
| 型號(hào)： | FDC697P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 1.8V PowerTrench MOSFET |
| 中文描述： | 8 A, 20 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, FLMP, SUPERSOT-6 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 159K |
| 代理商： | FDC697P |
January 2004
2004 Fairchild Semiconductor Corporation
FDC697P Rev C2 (W)
FDC697P
P-Channel 1.8V PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET
Fairchild’s advanced low voltage Power Trench
process. It has been optimized for battery power
management applications.
uses
Applications
Battery management
Load Switch
Battery protection
Features
–8 A, –20 V
R
DS(ON)
= 20 m
@ V
GS
= –4.5 V
R
DS(ON)
= 25 m
@ V
GS
= –2.5 V
R
DS(ON)
= 35 m
@ V
GS
= –1.8 V
High performance trench technology for extremely
low R
DS(ON)
Fast switching speed
FLMP SuperSOT-6 package: Enhanced thermal
performance in industry-standard package size
SuperSOT-6
TM
FLMP
S
S
S
G
S
S
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
–20
±
8
–8
–40
2
1.5
–55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation
(Note 1a)
– Pulsed
P
D
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
60
111
0.5
°
C/W
(Note 1b)
R
θ
JC
Package Marking and Ordering Information
Device Marking
Device
.697
FDC697P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
3
2
1
4
5
6
Bottom
Drain
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