參數(shù)資料
型號: FDC658AP
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Single P-Channel Logic Level PowerTrench㈢ MOSFET -30V, -4A, 50mOhm
中文描述: 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: ROHS COMPLIANT, SUPERSOT-6
文件頁數(shù): 1/5頁
文件大?。?/td> 239K
代理商: FDC658AP
January 2006
F
2006 Fairchild Semiconductor Corporation
FDC658AP Rev. B (W)
www.fairchildsemi.com
1
FDC658AP
Single P-Channel Logic Level PowerTrench
MOSFET
-30V, -4A, 50m
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild's advanced PowerTrench process. It has been
optimized for battery power management applications.
Applications
Battery management
Load switch
Battery protection
DC/DC conversion
Features
Max r
DS(on)
= 50 m
@ V
GS
= -10 V, I
D
= -4A
Max r
DS(on)
= 75 m
@ V
GS
= -4.5 V, I
D
= -3.4A
Low Gate Charge
High performance trench technology for extremely low
r
DS(on)
RoHS Compliant
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
-30
±
25
-4
-20
1.6
0.8
-55 to +150
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
I
D
A
P
D
Maximum Power dissipation
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
78
30
°C/W
°C/W
Device Marking
.58A
Device
FDC658AP
Reel Size
7inch
Tape Width
8mm
Quantity
3000 units
PIN 1
SuperSOT
TM
-6
S
D
D
G
D
D
5
1
6
2
3
4
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1)
(Note 1a)
- Pulsed
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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FDC658P-NL 制造商:Fairchild Semiconductor Corporation 功能描述:
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