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參數(shù)資料
| 型號： | FDC658P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 249K |
| 代理商： | FDC658P |
February 1999
FDC658P
Single P-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description
Features
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise note
Ratings
Units
V
DSS
Drain-Source Voltage
-30
V
V
GSS
Gate-Source Voltage - Continuous
±20
V
I
D
Drain Current - Continuous
(Note 1a)
-4
A
- Pulsed
-20
P
D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
0.8
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
FDC658P Rev.C
This P-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor's
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
advanced
-4 A, -30 V. R
DS(ON)
= 0.050
@ V
GS
= -10 V
R
DS(ON)
= 0.075
@ V
GS
= -4.5 V.
Low gate charge (8nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).
SOIC-16
SOT-23
SuperSOT
TM
-8
SO-8
SOT-223
SuperSOT
TM
-6
D
D
D
S
D
G
SuperSOT -6
.658
pin
1
3
3
5
6
4
1
2
1999 Fairchild Semiconductor Corporation
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDC658P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6 |
| FDC658P | 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-CH. FET 50 MO SSOT6 |
| FDC658P-NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDC6901L | 功能描述:MOSFET Integ. Load Switch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6901L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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