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參數(shù)資料
| 型號： | FDC658AP |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single P-Channel Logic Level PowerTrench㈢ MOSFET -30V, -4A, 50mOhm |
| 中文描述： | 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SUPERSOT-6 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 239K |
| 代理商： | FDC658AP |
F
FDC658AP Rev. B (W)
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage
I
D
= -250
μ
A, V
GS
= 0V
I
D
= -250
μ
A,
Referenced to 25°C
V
GS
= 0V, V
DS
= -24V
V
GS
=
±
25V, V
DS
= 0V
-30
V
-22
mV/°C
-1
μ
A
nA
±
100
On Characteristics
V
GS(TH)
V
GS(TH)
T
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A,
Referenced to 25°C
I
D
= -4A, V
GS
= -10V
I
D
= -3.4A, V
GS
= -4.5V
I
D
= -4A, V
GS
= -10V,
T
J
= 125°C
V
GS
= -10V, V
DS
= -5V
I
D
= -4A, V
DS
= -5V
-1
-1.8
-3
V
4
mV/°C
r
DS(on)
Static Drain-Source On-Resistance
44
67
50
75
m
60
70
I
D(ON)
g
FS
On-State Drain Current
Forward Transconductance
-20
A
S
8.4
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -15V, V
GS
= 0V,
f = 1MHz
470
126
61
pF
pF
pF
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -15V, I
D
= -1A
V
GS
= -10V, R
GEN
= 6
7
14
22
29
12
8.1
ns
ns
ns
ns
nC
nC
nC
12
16
6
6
2.1
2
V
DS
= -15V, I
D
= -4A,
V
GS
= -5V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
-1.3
-1.2
A
V
V
GS
= 0V, I
S
= -1.3 A (Note 2)
-0.77
Scale 1: 1 on letter size paper
2:
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
a) 78
o
C/W when mounted on a
1 in
2
pad of 2 oz copper
b) 156
o
C/W whe mounted on a
minimum pad of 2 oz copper
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