參數(shù)資料
型號: FDC699P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: P-Channel 2.5V PowerTrencH MOSFET
中文描述: 7 A, 20 V, 0.022 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, FLMP, SUPERSOT-6
文件頁數(shù): 1/6頁
文件大?。?/td> 162K
代理商: FDC699P
January 2004
2004 Fairchild Semiconductor Corporation
FDC699P Rev C2 (W)
FDC699P
P-Channel 2.5V PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
Battery management
Load Switch
Battery protection
Features
–7 A, –20 V
R
DS(ON)
= 22 m
@ V
GS
= –4.5 V
R
DS(ON)
= 30 m
@ V
GS
= –2.5 V
High performance trench technology for extremely
low R
DS(ON)
Fast switching speed
FLMP SuperSOT-6 package: Enhanced thermal
performance in industry-standard package size
SuperSOT-6
TM
FLMP
S
S
S
G
S
S
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
–20
±
12
–7
–40
2
1.5
–55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation
(Note 1a)
– Pulsed
P
D
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
60
111
0.5
°
C/W
(Note 1b)
R
θ
JC
Package Marking and Ordering Information
Device Marking
Device
.699
FDC699P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
3
2
1
4
5
6
Bottom Drain
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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