參數(shù)資料
型號： FDC6392S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode
中文描述： 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-6
文件頁數(shù)： 2/6頁
文件大?。?/td> 193K
代理商： FDC6392S
FDC6392S Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= –250
μ
A, Referenced to 25
°
C
V
DS
= –16 V,
V
GS
= 0 V
V
GS
= 12 V,
V
DS
= 0 V
V
GS
= –12 V,
V
DS
= 0 V
I
D
= –250
μ
A
–20
V
–16
mV/
°
C
μ
A
nA
nA
–1
100
–100
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –4.5 V, I
D
= –2.2 A
V
GS
= –2.5 V, I
D
= –1.8 A
V
GS
=–4.5 V, I
D
=–2.2 A, T
J
=125
°
C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –5 V,
I
D
= –2.2 A
I
D
= –250
μ
A
–0.6
–1.0
3
101
152
132
–1.5
V
mV/
°
C
m
150
200
211
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–6
A
S
6
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
369
80
39
7.6
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= –15 mV, f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
8
11
13
4
3.7
1
1
16
20
23
8
5.2
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V,
V
GS
= –4.5 V, R
GEN
= 6
I
D
= –1 A,
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –2.2 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
–0.8
A
V
GS
= 0 V,
I
S
= –0.8 A
(Note 2)
–0.8
–1.2
V
5.4
1.2
nS
nC
I
F
= –2.2 A,
d
iF
/d
t
= 100 A/μs
Schottky Diode Characteristics
I
R
Reverse Leakage
V
F
Forward Voltage
V
R
= 20 V
V
R
= 10V
I
F
= 500mA
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
148
14
55
5.2
0.34
400
20
200
10
0.4
μ
A
mA
μ
A
mA
V
0.26
0.35
I
F
= 1 A
0.40
0.35
0.45
0.42
V
F
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相關代理商/技術參數(shù)
參數(shù)描述
FDC6392S_Q 功能描述:MOSFET 20V P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6401N 功能描述:MOSFET Dual N-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6401N_NL 功能描述:MOSFET Dual N-Ch 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6401N_Q 功能描述:MOSFET Dual N-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6401N-CUT TAPE 制造商:FAIRCHILD 功能描述:20V 70 mOhm Dual N-Ch 2.5V Specified PowerTrench Mosfet SSOT-6
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