參數(shù)資料
型號(hào)： FDC6420C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 20V N & P-Channel PowerTrench MOSFETs
中文描述： 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-6
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 102K
代理商： FDC6420C
September 2001
2001 Fairchild Semiconductor Corporation
FDC6420C Rev C(W)
FDC6420C
20V N & P-Channel PowerTrench
MOSFETs
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.
Applications
DC/DC converter
Load switch
LCD display inverter
Features
Q1
3.0 A, 20V.
R
DS(ON)
= 70 m
@ V
GS
= 4.5 V
R
DS(ON)
= 95 m
@ V
GS
= 2.5 V
Q2
–2.2 A, 20V. R
DS(ON)
= 125 m
@ V
GS
= –4.5 V
R
DS(ON)
= 190 m
@ V
GS
= –2.5 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT –6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick).
D1
S2
G1
D2
S1
G2
SuperSOT -6
Pin 1
TM
SuperSOT-6
3
2
1
4
5
6
Q1(N)
Q2(P)
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Q1
20
±
12
3.0
12
Q2
–20
±
12
–2.2
–6
Units
V
V
A
(Note 1a)
(Note 1a)
0.96
0.9
0.7
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
130
60
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
.420
FDC6420C
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
相關(guān)PDF資料
PDF描述
FDC642 P-Channel 2.5V Specified PowerTrench⑩MOSFET
FDC642P P-Channel 2.5V Specified PowerTrench⑩MOSFET
FDC6432SH 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET
FDC645 N-Channel PowerTrench MOSFET
FDC645N N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC6420C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDC6420C_Q 功能描述:MOSFET 20V/-20V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC642P 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC642P_09 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -20V, -4A, 100m??
FDC642P_F085 功能描述:MOSFET P-CHANNEL 2.5V PowerTrench MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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