參數(shù)資料
型號(hào)： FDC638
廠商： Fairchild Semiconductor Corporation
英文描述： P-Channel 2.5V Specified PowerTrenchTM MOSFET
中文描述： P溝道MOSFET的2.5V的指定PowerTrenchTM
文件頁數(shù)： 2/9頁
文件大小： 240K
代理商： FDC638
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-20
V
Breakdown Voltage Temp. Coefficient
-18
mV/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -16 V, V
GS
= 0 V
-1
μA
T
J
= 55
o
C
-10
μA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
100
nA
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Reverse
V
GS
= -8 V, V
DS
= 0 V
-100
nA
V
GS(th)
V
GS(th)
/
T
J
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-0.4
-0.9
-1.5
V
Gate Threshold VoltageTemp.Coefficient
3
mV/
o
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -4.5 A
0.039
0.045
T
J
= 125
o
C
0.054
0.072
V
GS
= -2.5 V, I
D
= -3.8 A
0.057
0.065
I
D(on)
On-State Drain Current
V
GS
= -4.5 V, V
DS
= -5 V
-20
A
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
DS
= -10 V, I
D
= -4.5 A
6.5
S
C
iss
Input Capacitance
V
DS
= -10 V, V
GS
= 0 V,
1240
pF
C
oss
Output Capacitance
f = 1.0 MHz
270
pF
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Reverse Transfer Capacitance
100
pF
t
D(on)
Turn - On Delay Time
V
DD
= -5 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
8
16
ns
t
r
Turn - On Rise Time
15
27
ns
t
D(off)
Turn - Off Delay Time
45
65
ns
t
f
Turn - Off Fall Time
30
50
ns
Q
g
Total Gate Charge
V
DS
= -10 V, I
D
= -4.5 A,
13
19
nC
Q
gs
Gate-Source Charge
V
GS
= -5 V
1.8
nC
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
Gate-Drain Charge
3
nC
I
S
Continuous Source Diode Current
-1.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
-0.75
-1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by the user's board design.
a. 78
o
C/W when mounted on a 1 in
2
pad of 2oz Cu on FR-4 board.
b. 156
o
C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDC638P Rev.D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC638APZ 功能描述:MOSFET -20V P-Channel 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC638H 制造商:Fairchild Semiconductor Corporation 功能描述: 制造商:Freescale Semiconductor 功能描述:
FDC638P 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC638P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6
FDC638P_01 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V PowerTrench Specified MOSFET
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