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參數(shù)資料
| 型號(hào)： | FDC637BNZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 6.2A, 24mヘ |
| 中文描述： | 6200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SUPERSOT-6, 6 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 366K |
| 代理商： | FDC637BNZ |
F
www.fairchildsemi.com
3
2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
0
4
8
12
16
20
V
GS
= 1.5V
V
GS
=
4.5V
V
GS
=
2V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 2.5V
V
GS
= 1.8V
I
D
,
D
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
4
8
12
16
20
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
=
1.5V
V
GS
=
1.8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
,
DRAIN CURRENT(A)
V
GS
=
2.5V
V
GS
= 2V
V
GS
=
4.5V
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-75
-50
-25
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= 6.2A
V
GS
= 4.5V
N
Figure 4.
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
30
60
90
120
150
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= 6.2A
r
D
,
S
(
m
)
V
GS
,
GATE TO SOURCE VOLTAGE
(
V
)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0.0
0.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
1.0
1.5
2.0
2.5
0
4
8
12
16
20
V
DS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
,
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
20
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
Source to Drain Diode
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC638 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC638APZ | 功能描述:MOSFET -20V P-Channel 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC638H | 制造商:Fairchild Semiconductor Corporation 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| FDC638P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC638P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6 |
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