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參數(shù)資料
| 型號： | FDC637BNZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 6.2A, 24mヘ |
| 中文描述： | 6200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SUPERSOT-6, 6 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 366K |
| 代理商： | FDC637BNZ |
tm
September 2007
F
2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
www.fairchildsemi.com
1
F
DC637BNZ
N-Channel 2.5V Specified PowerTrench
MOSFET
20V, 6.2A, 24m
Features
Max r
DS(on)
= 24m
at V
GS
= 4.5V, I
D
= 6.2A
Max r
DS(on)
= 32m
at V
GS
= 2.5V, I
D
= 5.2A
Fast switching speed
Low gate charge (8nC typical)
High performance trench technology for extremely low r
DS(on)
SuperSOT–6 package: small footprint (72% smaller than
standard SO-8; low profile (1mm thick)
HBM ESD protection level > 2kV typical (Note 3)
Manufactured using green packaging material
Halide-Free
RoHS Compliant
General Description
This N-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench
process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices have been designed to offer exceptional power
dissipation in a very small footprint compared with bigger SO-8
and TSSOP-8 packages.
Applications
DC - DC Conversion
Load switch
Battery Protection
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
20
±12
6.2
20
1.6
0.8
–55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous T
A
= 25°C (Note 1a)
-Pulsed
Power Dissipation T
A
= 25°C (Note 1a)
Power Dissipation T
A
= 25°C (Note 1b)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 1a)
78
°C/W
Thermal Resistance, Junction to Ambient (Note 1b)
156
Device Marking
.637Z
Device
FDC637BNZ
Package
SSOT6
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
SuperSOT
TM
-6
Pin 1
D
S
G
D
D
D
D
G
D
D
S
D
2
3
1
5
4
6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC638 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC638APZ | 功能描述:MOSFET -20V P-Channel 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC638H | 制造商:Fairchild Semiconductor Corporation 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| FDC638P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC638P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6 |
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