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參數(shù)資料
| 型號(hào)： | FDC637BNZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 6.2A, 24mヘ |
| 中文描述： | 6200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SUPERSOT-6, 6 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 366K |
| 代理商： | FDC637BNZ |
F
www.fairchildsemi.com
2
2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
20
V
I
D
= 250
μ
A, referenced to 25°C
10
mV
/°
C
V
DS
= 16V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
1
μ
A
μ
A
±10
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
0.6
0.8
1.5
V
I
D
= 250
μ
A, referenced to 25°C
-3
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 4.5V, I
D
= 6.2A
V
GS
= 2.5V, I
D
= 5.2A
V
GS
= 4.5V, I
D
= 6.2A, T
J
= 125°C
V
DD
= 5V, I
D
= 6.2A
21
26
30
27
24
32
41
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 10V, V
GS
= 0V,
f = 1MHz
670
160
115
2.1
895
215
175
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= 10V, I
D
= 6.2A
V
GS
= 4.5V, R
GEN
= 6
8
6
16
12
36
12
12
ns
ns
ns
ns
nC
nC
nC
22
6
8
1.3
2.2
V
GS
= 4.5V, V
DD
= 10V,
I
D
= 6.2A
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is
guaranteed by design while R
θ
JA
is determined by
the user's board design.
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage V
GS
= 0V, I
S
= 1.3A (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
1.3
1.2
27
10
A
V
ns
nC
0.7
15
5
I
F
= 6.2A, di/dt = 100A/
μ
s
2. Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
a. 78°C/W when mounted on a
1 in
pad of 2 oz copper.
b. 156°C/W when mounted on a
minimum pad of 2 oz copper.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC638 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC638APZ | 功能描述:MOSFET -20V P-Channel 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC638H | 制造商:Fairchild Semiconductor Corporation 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| FDC638P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC638P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6 |
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