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參數(shù)資料
| 型號： | FDC637AN |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET |
| 中文描述： | 6200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SUPERSOT-6 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 240K |
| 代理商： | FDC637AN |
F
FDC637AN, Rev. C
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 8 V, V
DS
= 0 V
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -8 V, V
DS
= 0 V
Parameter
Test Conditions
Min
Typ
Max
Units
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 16 V, V
GS
= 0 V
20
V
Breakdown Voltage Temperature
14
mV/
°
C
1
μ
A
nA
nA
100
-100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
=250
μ
A,Referenced to 125
°
C
V
GS
= 4.5 V,I
D
= 6.2 A
V
GS
= 4.5 V,I
D
= 6.2 A,T
J
=125
°
C
V
GS
= 2.5 V, I
D
= 5.2 A
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 6.2 A
0.4
0.82
-3
1.5
V
Gate Threshold Voltage
mV/
°
C
0.019
0.028
0.025
7.4
0.024
0.041
0.032
A
S
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
10
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1125
290
145
pF
pF
pF
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
9
13
26
11
10.5
1.5
2.2
18
24
42
20
16
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
V
DS
= 5 V, I
D
= 6.2 A,
V
GS
= 4.5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
1.3
1.2
A
V
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
0.7
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 78
°
C/W when mounted on a 1.0 in
2
pad of 2 oz. copper.
b) 156
°
C/W when mounted on a minimum pad of 2 oz.copper.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDC637AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 20V, 6.2A, SUPER SOT-6 |
| FDC637AN_F095 | 功能描述:MOSFET 2.5V N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC637BNZ | 功能描述:MOSFET 20V N-Channel 2.5V Spec PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC638 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC638APZ | 功能描述:MOSFET -20V P-Channel 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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