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參數(shù)資料
| 型號： | FDC637AN |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET |
| 中文描述： | 6200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SUPERSOT-6 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 240K |
| 代理商： | FDC637AN |
F
FDC637AN, Rev. C
FDC637AN
Single N-Channel, 2.5V Specified PowerTrench
TM
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using
Fairchild
Semiconductor's
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
advanced
These devices have been designed to offer exceptional
power dissipation in a very small footprint compared
with bigger SO-8 and TSSOP-8 packages.
Applications
DC/DC converter
Load switch
Battery Protection
November 1999
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
FDC637AN
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Power Dissipation for Single Operation
20
±
8
6.2
20
1.6
0.8
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
(Note 1a)
W
(Note 1b)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
30
°
C/W
°
C/W
(Note 1)
Package Outlines and Ordering Information
Device Marking
.637
Device
FDC637AN
Reel Size
7
’’
Tape Width
8mm
Quantity
3000 units
Features
6.2 A, 20 V. R
DS(on)
= 0.024
@ V
GS
= 4.5 V
R
DS(on)
= 0.032
@ V
GS
= 2.5 V
Fast switching speed.
Low gate charge (10.5nC typical).
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
5
6
4
1
2
3
D
D
D
S
D
G
SuperSOT -6
TM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDC637BNZ | N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 6.2A, 24mヘ |
| FDC638APZ | P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm |
| FDC638 | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC638P | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC6392S | 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC637AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 20V, 6.2A, SUPER SOT-6 |
| FDC637AN_F095 | 功能描述:MOSFET 2.5V N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC637BNZ | 功能描述:MOSFET 20V N-Channel 2.5V Spec PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC638 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC638APZ | 功能描述:MOSFET -20V P-Channel 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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