參數(shù)資料
型號(hào): FDC5612
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: 60V N-Channel PowerTrenchTM MOSFET
中文描述: 4300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: LEAD FREE, SUPERSOT-6
文件頁數(shù): 4/8頁
文件大?。?/td> 244K
代理商: FDC5612
F
FDC5612 Rev. C
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
0.00001
0.0001
0.001
0.01
0.1
1
10
100
300
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
R (t) = r(t) * R
R = 156
°
C/W
T - T = P * R (t)
P(pk)
t
1
t
2
0
1
2
3
4
5
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
= 156
o
C/W
T
A
= 25
o
C
0
100
200
300
400
500
600
700
800
900
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
0
2
4
6
8
10
0
2
4
6
8
10
12
14
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 4.3A
V
DS
= 10V
20V
30V
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
DC
1s
100ms
10ms
1ms
100
μ
s
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 156
o
C/W
T
A
= 25
o
C
R
DS(ON)
LIMIT
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