- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375767 > FDC5612 (FAIRCHILD SEMICONDUCTOR CORP) 60V N-Channel PowerTrenchTM MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDC5612 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 60V N-Channel PowerTrenchTM MOSFET |
| 中文描述： | 4300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SUPERSOT-6 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 244K |
| 代理商： | FDC5612 |
F
FDC5612 Rev. C
FDC5612
60V N-Channel PowerTrench
TM
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
May 1999
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Power Dissipation for Single Operation
60
±
20
4.3
20
1.6
0.8
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
(Note 1a)
W
(Note 1b)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
78
30
°
C/W
°
C/W
(Note 1)
Package Outlines and Ordering Information
Device Marking
.612
Device
FDC5612
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
Features
4.3 A, 60 V. R
DS(ON)
= 0.055
W
@ V
GS
= 10 V
R
DS(ON)
= 0.064
W
@ V
GS
= 6 V.
Low gate charge (12.5nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
5
6
4
1
2
3
SuperSOT
TM
-6
S
D
D
D
D
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDC5614P | 60V P-Channel Logic Level PowerTrench MOSFET(P溝道PowerTrench MOS場效應(yīng)管) |
| FDC5614 | 60V P-Channel Logic Level PowerTrench MOSFET |
| FDC6000NZ | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDC6020C | Complementary PowerTrench MOSFET |
| FDC602P | P-Channel 2.5V PowerTrench Specified MOSFET(門限電壓2.5V的P溝道PowerTrench指定MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC5612 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6 |
| FDC5612_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V N-Channel PowerTrench㈢ MOSFET |
| FDC5612_F095 | 功能描述:MOSFET 60V 4.3A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC5612NL | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 60V 4.3A 6-Pin SuperSOT T/R |
| FDC5614 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V P-Channel Logic Level PowerTrench MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。