- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375768 > FDC6000NZ (FAIRCHILD SEMICONDUCTOR CORP) Dual N-Channel 2.5V Specified PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDC6000NZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 7300 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, FLMP, SUPERSOT-6, SSOT-6, 6 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 174K |
| 代理商： | FDC6000NZ |
June 2004
2004 Fairchild Semiconductor Corporation
FDC6000NZ Rev E1 (W)
FDC6000NZ
Dual N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V). Packaged in FLMP SSOT-6,
the R
DS(ON)
and thermal properties of the device are
optimized for battery power management applications.
Applications
Battery management/Charger Application
Load switch
Features
6.5 A, 20 V
R
DS(ON)
= 20 m
@ V
GS
= 4.5 V
R
DS(ON)
= 28 m
@ V
GS
= 2.5 V
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
3
2
1
4
5
6
Bottom Drain Contact
Bottom Drain Contact
MOSFET Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
7.3
20
1.6
1.8
1.2
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
Jc
Thermal Resistance, Junction-to-Case
(Note 1a)
68
1
°
C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
.0NZ
FDC6000NZ
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
SuperSOT-6
G1
S1
S1
S2
G2
S2
TM
FLMP
相關PDF資料 |
PDF描述 |
|---|---|
| FDC6020C | Complementary PowerTrench MOSFET |
| FDC602P | P-Channel 2.5V PowerTrench Specified MOSFET(門限電壓2.5V的P溝道PowerTrench指定MOS場效應管) |
| FDC602 | P-Channel 2.5V Specified PowerTrench MOSFET |
| FDC6036P | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDC604 | P-Channel 1.8V Specified PowerTrench MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDC6000NZ_F077 | 功能描述:MOSFET 2.5V DUAL N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC60-12D05 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:60 WATTS OUTPUT POWER |
| FDC60-12D12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:60 WATTS OUTPUT POWER |
| FDC60-12D15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:60 WATTS OUTPUT POWER |
| FDC60-12D3305 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:60 WATTS OUTPUT POWER |
發(fā)布緊急采購，3分鐘左右您將得到回復。