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參數(shù)資料
| 型號： | FDC5612 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 60V N-Channel PowerTrenchTM MOSFET |
| 中文描述： | 4300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SUPERSOT-6 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 244K |
| 代理商： | FDC5612 |
F
FDC5612 Rev. C
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage Current, Forward
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
60
V
Breakdown Voltage Temperature
58
mV/
°
C
V
DS
= 48 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
1
μ
A
nA
nA
100
-100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
2
2.2
-5.5
4
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 10 V, I
D
= 4.3 A
V
GS
= 10 V, I
D
= 4.3 A, T
J
= 125
°
C
V
GS
= 6 V, I
D
= 4 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 10 V, I
D
= 4.3 A
0.042
0.072
0.048
0.055
0.094
0.064
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
10
A
S
14
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
650
80
35
pF
pF
pF
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
11
8
19
6
12.5
2.4
2.6
20
18
35
15
18
ns
ns
ns
ns
nC
nC
nC
V
DD
= 30 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
V
DS
= 30 V, I
D
= 4.3 A,
V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
1.3
1.2
A
V
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
0.75
Notes:
1.
R
q
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
q
JC
is guaranteed by design while R
q
CA
is determined by the user's board design.
a) 78
°
C/W when mounted on a 1.0 in
2
pad of 2 oz. copper.
2.
Pulse Test: Pulse Width
￡
300
m
s, Duty Cycle
￡
2.0%
b) 156
°
C/W when mounted on a minimum pad.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC5612 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6 |
| FDC5612_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V N-Channel PowerTrench㈢ MOSFET |
| FDC5612_F095 | 功能描述:MOSFET 60V 4.3A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC5612NL | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 60V 4.3A 6-Pin SuperSOT T/R |
| FDC5614 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V P-Channel Logic Level PowerTrench MOSFET |
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