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參數(shù)資料
| 型號(hào)： | FCP11N60F |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 11 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 836K |
| 代理商： | FCP11N60F |
4
www.fairchildsemi.com
FCP11N60F/FCPF11N60F Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9-1. Safe Operating Area
for FCP11N60F
Figure 9-2. Safe Operating Area
for FCPF11N60F
Figure 10. Maximum Drain Current vs. Case Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
= 10 V
2. I
D
= 5.5 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
Operation in This Area
is Limited by R
DS(on)
DC
10 ms
1 ms
100 us
* Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100 us
DC
100 ms
10 ms
1 ms
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0.0
2.5
5.0
7.5
10.0
12.5
I
D
,
T
C
, Case Temperature [
o
C]
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