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參數(shù)資料
| 型號： | FCPF7N60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 7 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 802K |
| 代理商： | FCPF7N60 |
2005 Fairchild Semiconductor Corporation
FCP7N60 / FCPF7N60 Rev. A
1
www.fairchildsemi.com
F
SuperF E T
TM
FCP7N60 / FCPF7N60
600V N-Channel MOSFET
Features
650V @T
J
= 150°C
Typ. R
DS(on)
= 0.53
Ultra low gate charge (typ. Q
g
= 25nC)
Low effective output capacitance (typ. C
oss
.eff = 60pF)
100% avalanche tested
Description
SuperFET
TM
is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
! "
!
!
S
!
"
"
D
G
TO-220
G
S
D
TO-220F
G
S
D
Symbol
Parameter
FCP7N60
FCPF7N60
Unit
V
DSS
I
D
Drain-Source Voltage
600
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
7
4.4
7*
4.4*
A
A
I
DM
Drain Current
(Note 1)
21
21*
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
230
mJ
Avalanche Current
(Note 1)
7
A
Repetitive Avalanche Energy
(Note 1)
8.3
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
83
0.67
31
0.25
W
W/
°
C
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
FCP7N60
FCPF7N60
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
1.5
4.0
°
C/W
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FCPF7N60NT | 功能描述:MOSFET 600V N-Channel SupreMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FCPF7N60T | 功能描述:MOSFET N-CH 600V 7A TO-220F RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:SuperFET™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| FCPF7N60YDTU | 功能描述:MOSFET 600V N-Channel SuperFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FCPF9N60NT | 功能描述:MOSFET SupreMOS 9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FCPH1280-10 | 制造商:SYNERGY 制造商全稱:SYNERGY MICROWAVE CORPORATION 功能描述:FIXED FREQUENCY SYNTHESIZER |
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