參數(shù)資料
型號(hào): FCP7N60
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 600V N-Channel MOSFET
中文描述: 7 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 1/10頁
文件大?。?/td> 802K
代理商: FCP7N60
2005 Fairchild Semiconductor Corporation
FCP7N60 / FCPF7N60 Rev. A
1
www.fairchildsemi.com
F
SuperF E T
TM
FCP7N60 / FCPF7N60
600V N-Channel MOSFET
Features
650V @T
J
= 150°C
Typ. R
DS(on)
= 0.53
Ultra low gate charge (typ. Q
g
= 25nC)
Low effective output capacitance (typ. C
oss
.eff = 60pF)
100% avalanche tested
Description
SuperFET
TM
is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
! "
!
!
S
!
"
"
D
G
TO-220
G
S
D
TO-220F
G
S
D
Symbol
Parameter
FCP7N60
FCPF7N60
Unit
V
DSS
I
D
Drain-Source Voltage
600
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
7
4.4
7*
4.4*
A
A
I
DM
Drain Current
(Note 1)
21
21*
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
230
mJ
Avalanche Current
(Note 1)
7
A
Repetitive Avalanche Energy
(Note 1)
8.3
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
83
0.67
31
0.25
W
W/
°
C
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
FCP7N60
FCPF7N60
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
1.5
4.0
°
C/W
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
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